Infineon Technologies - FF650R17IE4DPB2BOSA1

KEY Part #: K6533407

FF650R17IE4DPB2BOSA1 Preț (USD) [151buc Stoc]

  • 1 pcs$304.26154

Numărul piesei:
FF650R17IE4DPB2BOSA1
Producător:
Infineon Technologies
Descriere detaliata:
IGBT MODULE VCES 1700V 650A.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Arrays, Dioduri - RF, Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Bipolari (BJT) - RF, Tiristoare - DIAC, SIDAC, Tranzistori - IGBT - Single and Tranzistori - Bipolari (BJT) - Arrays ...
Avantaj competitiv:
We specialize in Infineon Technologies FF650R17IE4DPB2BOSA1 electronic components. FF650R17IE4DPB2BOSA1 can be shipped within 24 hours after order. If you have any demands for FF650R17IE4DPB2BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF650R17IE4DPB2BOSA1 Atributele produsului

Numărul piesei : FF650R17IE4DPB2BOSA1
Producător : Infineon Technologies
Descriere : IGBT MODULE VCES 1700V 650A
Serie : -
Starea parțială : Active
Tip IGBT : Trench Field Stop
configurație : 2 Independent
Tensiune - emițător colector (Max) : 1700V
Curent - Colector (Ic) (Max) : 650A
Putere - Max : -
Vce (pe) (Max) @ Vge, Ic : 2.45V @ 15V, 650A
Curentul curent - colector (maxim) : 5mA
Capacitate de intrare (Cies) @ Vce : 54nF @ 25V
Intrare : Standard
Termistor NTC : Yes
Temperatura de Operare : -40°C ~ 150°C
Tipul de montare : Chassis Mount
Pachet / Caz : Module
Pachetul dispozitivelor furnizorilor : Module

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