Vishay Semiconductor Diodes Division - VS-GT100TP60N

KEY Part #: K6533284

VS-GT100TP60N Preț (USD) [427buc Stoc]

  • 1 pcs$108.51287
  • 24 pcs$89.00937

Numărul piesei:
VS-GT100TP60N
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
IGBT 600V 160A 417W INT-A-PAK.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Modulele Power Driver, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - FET, MOSFET - Arrays, Dioduri - Zener - Arrays, Dioduri - Zener - Single, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - RF and Tiristoare - SCR-uri ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VS-GT100TP60N electronic components. VS-GT100TP60N can be shipped within 24 hours after order. If you have any demands for VS-GT100TP60N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GT100TP60N Atributele produsului

Numărul piesei : VS-GT100TP60N
Producător : Vishay Semiconductor Diodes Division
Descriere : IGBT 600V 160A 417W INT-A-PAK
Serie : -
Starea parțială : Active
Tip IGBT : Trench
configurație : Half Bridge
Tensiune - emițător colector (Max) : 600V
Curent - Colector (Ic) (Max) : 160A
Putere - Max : 417W
Vce (pe) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Curentul curent - colector (maxim) : 5mA
Capacitate de intrare (Cies) @ Vce : 7.71nF @ 30V
Intrare : Standard
Termistor NTC : No
Temperatura de Operare : 175°C (TJ)
Tipul de montare : Chassis Mount
Pachet / Caz : INT-A-PAK (3 + 4)
Pachetul dispozitivelor furnizorilor : INT-A-PAK

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