Vishay Semiconductor Diodes Division - VS-GB100TH120U

KEY Part #: K6533233

VS-GB100TH120U Preț (USD) [261buc Stoc]

  • 1 pcs$177.68022
  • 12 pcs$163.71967

Numărul piesei:
VS-GB100TH120U
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
IGBT 1200V 200A 1136W INT-A-PAK.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Redresoare - Single, Tranzistori - IGBT - Single, Tranzistori - FET, MOSFET - Arrays, Dioduri - punți redresoare, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - JFET-uri, Dioduri - Zener - Arrays and Tiristoare - TRIAC ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120U electronic components. VS-GB100TH120U can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120U, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100TH120U Atributele produsului

Numărul piesei : VS-GB100TH120U
Producător : Vishay Semiconductor Diodes Division
Descriere : IGBT 1200V 200A 1136W INT-A-PAK
Serie : -
Starea parțială : Active
Tip IGBT : NPT
configurație : Half Bridge
Tensiune - emițător colector (Max) : 1200V
Curent - Colector (Ic) (Max) : 200A
Putere - Max : 1136W
Vce (pe) (Max) @ Vge, Ic : 3.6V @ 15V, 100A
Curentul curent - colector (maxim) : 5mA
Capacitate de intrare (Cies) @ Vce : 8.45nF @ 20V
Intrare : Standard
Termistor NTC : No
Temperatura de Operare : -40°C ~ 150°C (TJ)
Tipul de montare : Chassis Mount
Pachet / Caz : Double INT-A-PAK (3 + 4)
Pachetul dispozitivelor furnizorilor : Double INT-A-PAK

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