Vishay Semiconductor Diodes Division - B125C800G-E4/51

KEY Part #: K6539912

B125C800G-E4/51 Preț (USD) [308641buc Stoc]

  • 1 pcs$0.11984
  • 3,000 pcs$0.09916

Numărul piesei:
B125C800G-E4/51
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
BRIDGE RECT 1P 200V 900MA WOG. Bridge Rectifiers 0.9 Amp 200 Volt
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Dioduri - Redresoare - Single, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - Module IGBT, Dioduri - Redresoare - Arrays, Dioduri - Zener - Arrays, Tranzistori - FET, MOSFET - Single and Tiristoare - DIAC, SIDAC ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division B125C800G-E4/51 electronic components. B125C800G-E4/51 can be shipped within 24 hours after order. If you have any demands for B125C800G-E4/51, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

B125C800G-E4/51 Atributele produsului

Numărul piesei : B125C800G-E4/51
Producător : Vishay Semiconductor Diodes Division
Descriere : BRIDGE RECT 1P 200V 900MA WOG
Serie : -
Starea parțială : Active
Tipul diodei : Single Phase
Tehnologie : Standard
Voltaj - vârf înapoi (Max) : 200V
Curent - mediu rectificat (Io) : 900mA
Tensiune - înainte (Vf) (Max) @ Dacă : 1V @ 900mA
Scurgeri reversibile de curent @ Vr : 10µA @ 200V
Temperatura de Operare : -40°C ~ 125°C (TJ)
Tipul de montare : Through Hole
Pachet / Caz : 4-Circular, WOG
Pachetul dispozitivelor furnizorilor : WOG

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