Vishay Semiconductor Diodes Division - VS-HFA08TB120SR-M3

KEY Part #: K6471244

VS-HFA08TB120SR-M3 Preț (USD) [94052buc Stoc]

  • 1 pcs$0.41574

Numărul piesei:
VS-HFA08TB120SR-M3
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE ARRAY GP 1200V 8A D2PAK. Diodes - General Purpose, Power, Switching 1200V 8A IF TO-220AC 130A IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - scop special, Tranzistori - Bipolari (BJT) - RF, Tiristoare - TRIAC, Tranzistori - FET, MOSFET - RF, Tranzistori - IGBT - Arrays, Modulele Power Driver and Tranzistori - FET, MOSFET - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VS-HFA08TB120SR-M3 electronic components. VS-HFA08TB120SR-M3 can be shipped within 24 hours after order. If you have any demands for VS-HFA08TB120SR-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA08TB120SR-M3 Atributele produsului

Numărul piesei : VS-HFA08TB120SR-M3
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE ARRAY GP 1200V 8A D2PAK
Serie : HEXFRED®
Starea parțială : Active
Configurarea diodelor : -
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 1200V
Curent - Mediu rectificat (Io) (pe diodă) : -
Tensiune - înainte (Vf) (Max) @ Dacă : 4.3V @ 16A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 95ns
Scurgeri reversibile de curent @ Vr : 10µA @ 1200V
Temperatura de funcționare - Junction : -55°C ~ 150°C
Tipul de montare : Surface Mount
Pachet / Caz : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor : TO-263AB (D²PAK)

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