UGB8JTHE3/81 Preț (USD) [93417buc Stoc]
- 1 pcs$0.41856
- 800 pcs$0.39203
- Numărul piesei:
- UGB8JTHE3/81
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8.0A 600 Volt 25ns 65 Amp IFSM
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Arrays, Tiristoare - TRIAC, Tranzistori - IGBT - Arrays, Tranzistori - JFET-uri, Dioduri - Redresoare - Single, Tranzistori - FET, MOSFET - RF, Dioduri - Capacitate variabilă (Varicaps, Varactor and Tiristoare - DIAC, SIDAC ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division UGB8JTHE3/81 electronic components. UGB8JTHE3/81 can be shipped within 24 hours after order. If you have any demands for UGB8JTHE3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB8JTHE3/81 Atributele produsului
Numărul piesei :
UGB8JTHE3/81
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 600V 8A TO263AB
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
600V
Curent - mediu rectificat (Io) :
8A
Tensiune - înainte (Vf) (Max) @ Dacă :
1.75V @ 8A
Viteză :
Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
50ns
Scurgeri reversibile de curent @ Vr :
30µA @ 600V
Capacitate @ Vr, F :
-
Tipul de montare :
Surface Mount
Pachet / Caz :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor :
TO-263AB
Temperatura de funcționare - Junction :
-55°C ~ 150°C
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