SQ1912AEEH-T1_GE3 Preț (USD) [485597buc Stoc]
- 1 pcs$0.07617
- Numărul piesei:
- SQ1912AEEH-T1_GE3
- Producător:
- Vishay Siliconix
- Descriere detaliata:
- MOSFET 2N-CH 20V POWERPAK SC70-6.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - RF, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - scop special, Tranzistori - Bipolari (BJT) - Arrays, Tiristoare - DIAC, SIDAC, Tranzistori - JFET-uri, Tiristoare - SCR - Module and Dioduri - Zener - Arrays ...
- Avantaj competitiv:
- We specialize in Vishay Siliconix SQ1912AEEH-T1_GE3 electronic components. SQ1912AEEH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1912AEEH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1912AEEH-T1_GE3 Atributele produsului
Numărul piesei :
SQ1912AEEH-T1_GE3
Producător :
Vishay Siliconix
Descriere :
MOSFET 2N-CH 20V POWERPAK SC70-6
Serie :
Automotive, AEC-Q101, TrenchFET®
Starea parțială :
Active
Tipul FET :
2 N-Channel (Dual)
FET Feature :
Standard
Scurgeți la sursa de tensiune (Vdss) :
20V
Curent - scurgere continuă (Id) la 25 ° C :
800mA (Tc)
Rds On (Max) @ Id, Vgs :
280 mOhm @ 1.2A, 4.5V
Vgs (a) (Max) @ Id :
1.5V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
1.25nC @ 4.5V
Capacitate de intrare (Ciss) (Max) @ Vds :
27pF @ 10V
Putere - Max :
1.5W
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
PowerPAK® SC-70-6 Dual
Pachetul dispozitivelor furnizorilor :
PowerPAK® SC-70-6 Dual
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