Microsemi Corporation - APT100GT120JU2

KEY Part #: K6533620

APT100GT120JU2 Preț (USD) [2722buc Stoc]

  • 1 pcs$15.91435
  • 10 pcs$14.72182
  • 25 pcs$13.52817
  • 100 pcs$12.57327
  • 250 pcs$11.53876

Numărul piesei:
APT100GT120JU2
Producător:
Microsemi Corporation
Descriere detaliata:
IGBT 1200V 140A 480W SOT227.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Zener - Arrays, Tranzistori - Unijuncții programabile, Tiristoare - DIAC, SIDAC, Tiristoare - TRIAC, Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - Arrays, pre-biased and Tranzistori - Bipolari (BJT) - RF ...
Avantaj competitiv:
We specialize in Microsemi Corporation APT100GT120JU2 electronic components. APT100GT120JU2 can be shipped within 24 hours after order. If you have any demands for APT100GT120JU2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT100GT120JU2 Atributele produsului

Numărul piesei : APT100GT120JU2
Producător : Microsemi Corporation
Descriere : IGBT 1200V 140A 480W SOT227
Serie : -
Starea parțială : Active
Tip IGBT : Trench Field Stop
configurație : Single
Tensiune - emițător colector (Max) : 1200V
Curent - Colector (Ic) (Max) : 140A
Putere - Max : 480W
Vce (pe) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Curentul curent - colector (maxim) : 5mA
Capacitate de intrare (Cies) @ Vce : 7.2nF @ 25V
Intrare : Standard
Termistor NTC : No
Temperatura de Operare : -55°C ~ 150°C (TJ)
Tipul de montare : Chassis Mount
Pachet / Caz : ISOTOP
Pachetul dispozitivelor furnizorilor : SOT-227

Poți fi, de asemenea, interesat
  • VS-GT175DA120U

    Vishay Semiconductor Diodes Division

    IGBT 1200V 288A 1087W SOT-227.

  • VS-CPV363M4KPBF

    Vishay Semiconductor Diodes Division

    MOD IGBT 3PHASE INV 600V SIP.

  • VS-GT100NA120UX

    Vishay Semiconductor Diodes Division

    IGBT 1200V 134A 463W SOT-227.

  • VS-GT100LA120UX

    Vishay Semiconductor Diodes Division

    IGBT 1200V 134A 463W SOT-227.

  • VS-GT100DA60U

    Vishay Semiconductor Diodes Division

    IGBT 600V 184A 577W SOT-227.

  • VS-GT100DA120U

    Vishay Semiconductor Diodes Division

    IGBT 1200V 258A 893W SOT-227.