Vishay Semiconductor Diodes Division - VS-10ETF06-M3

KEY Part #: K6434638

VS-10ETF06-M3 Preț (USD) [39589buc Stoc]

  • 1 pcs$0.98764
  • 1,000 pcs$0.89069

Numărul piesei:
VS-10ETF06-M3
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 600V 10A TO220AC. Schottky Diodes & Rectifiers New Input Diodes - TO-220-e3
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - RF, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - punți redresoare, Dioduri - RF, Dioduri - Zener - Arrays, Tiristoare - DIAC, SIDAC, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Tranzistori - Bipolari (BJT) - Arrays, pre-biased ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VS-10ETF06-M3 electronic components. VS-10ETF06-M3 can be shipped within 24 hours after order. If you have any demands for VS-10ETF06-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-10ETF06-M3 Atributele produsului

Numărul piesei : VS-10ETF06-M3
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 600V 10A TO220AC
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 600V
Curent - mediu rectificat (Io) : 10A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.2V @ 10A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 200ns
Scurgeri reversibile de curent @ Vr : 100µA @ 600V
Capacitate @ Vr, F : -
Tipul de montare : Through Hole
Pachet / Caz : TO-220-2
Pachetul dispozitivelor furnizorilor : TO-220AC
Temperatura de funcționare - Junction : -40°C ~ 150°C

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