Vishay Semiconductor Diodes Division - NS8ATHE3_A/P

KEY Part #: K6442313

NS8ATHE3_A/P Preț (USD) [3176buc Stoc]

  • 1,000 pcs$0.26162

Numărul piesei:
NS8ATHE3_A/P
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 50V 8A TO220AC.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Tranzistori - JFET-uri, Dioduri - punți redresoare, Tranzistori - Bipolari (BJT) - Arrays, Modulele Power Driver, Dioduri - RF, Tranzistori - Bipolari (BJT) - RF and Tranzistori - FET, MOSFET - RF ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division NS8ATHE3_A/P electronic components. NS8ATHE3_A/P can be shipped within 24 hours after order. If you have any demands for NS8ATHE3_A/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NS8ATHE3_A/P Atributele produsului

Numărul piesei : NS8ATHE3_A/P
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 50V 8A TO220AC
Serie : Automotive, AEC-Q101
Starea parțială : Obsolete
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 50V
Curent - mediu rectificat (Io) : 8A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.1V @ 8A
Viteză : Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) : -
Scurgeri reversibile de curent @ Vr : 10µA @ 50V
Capacitate @ Vr, F : 55pF @ 4V, 1MHz
Tipul de montare : Through Hole
Pachet / Caz : TO-220-2
Pachetul dispozitivelor furnizorilor : TO-220AC
Temperatura de funcționare - Junction : -55°C ~ 150°C

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