1N4150W-HE3-08 Preț (USD) [2033073buc Stoc]
- 1 pcs$0.01920
- 3,000 pcs$0.01910
- 6,000 pcs$0.01661
- 15,000 pcs$0.01412
- 30,000 pcs$0.01329
- 75,000 pcs$0.01246
- 150,000 pcs$0.01107
- Numărul piesei:
- 1N4150W-HE3-08
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - IGBT - Arrays, Tranzistori - FET, MOSFET - Arrays, Tranzistori - Bipolari (BJT) - Single, Tiristoare - SCR-uri, Tranzistori - Bipolari (BJT) - RF, Dioduri - punți redresoare and Tiristoare - TRIAC ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division 1N4150W-HE3-08 electronic components. 1N4150W-HE3-08 can be shipped within 24 hours after order. If you have any demands for 1N4150W-HE3-08, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4150W-HE3-08 Atributele produsului
Numărul piesei :
1N4150W-HE3-08
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 50V 200MA SOD123
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
50V
Curent - mediu rectificat (Io) :
200mA
Tensiune - înainte (Vf) (Max) @ Dacă :
1V @ 200mA
Viteză :
Small Signal =< 200mA (Io), Any Speed
Timp de recuperare invers (trr) :
4ns
Scurgeri reversibile de curent @ Vr :
100nA @ 50V
Capacitate @ Vr, F :
2.5pF @ 0V, 1MHz
Tipul de montare :
Surface Mount
Pachet / Caz :
SOD-123
Pachetul dispozitivelor furnizorilor :
SOD-123
Temperatura de funcționare - Junction :
-55°C ~ 150°C
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