TK560P65Y,RQ Preț (USD) [190859buc Stoc]
- 1 pcs$0.21424
- 2,000 pcs$0.21317
- Numărul piesei:
- TK560P65Y,RQ
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CHANNEL 650V 7A DPAK.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Redresoare - Single, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Single, Dioduri - Zener - Single, Dioduri - Zener - Arrays, Tiristoare - SCR - Module, Dioduri - Redresoare - Arrays and Tranzistori - Unijuncții programabile ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TK560P65Y,RQ electronic components. TK560P65Y,RQ can be shipped within 24 hours after order. If you have any demands for TK560P65Y,RQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK560P65Y,RQ Atributele produsului
Numărul piesei :
TK560P65Y,RQ
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CHANNEL 650V 7A DPAK
Serie :
DTMOSV
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
650V
Curent - scurgere continuă (Id) la 25 ° C :
7A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
560 mOhm @ 3.5A, 10V
Vgs (a) (Max) @ Id :
4V @ 240µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±30V
Capacitate de intrare (Ciss) (Max) @ Vds :
380pF @ 300V
FET Feature :
-
Distrugerea puterii (Max) :
60W (Tc)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
DPAK
Pachet / Caz :
TO-252-3, DPak (2 Leads + Tab), SC-63
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