IPB60R199CPAATMA1 Preț (USD) [42916buc Stoc]
- 1 pcs$0.91108
- 1,000 pcs$0.83581
- Numărul piesei:
- IPB60R199CPAATMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N-CH TO263-3.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Single, Dioduri - Zener - Single, Tranzistori - IGBT - Single, Tranzistori - IGBT - Arrays, Modulele Power Driver, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Bipolari (BJT) - Arrays and Tranzistori - scop special ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPB60R199CPAATMA1 electronic components. IPB60R199CPAATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R199CPAATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB60R199CPAATMA1 Atributele produsului
Numărul piesei :
IPB60R199CPAATMA1
Producător :
Infineon Technologies
Descriere :
MOSFET N-CH TO263-3
Serie :
Automotive, AEC-Q101, CoolMOS™
Starea parțială :
Not For New Designs
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
600V
Curent - scurgere continuă (Id) la 25 ° C :
16A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
199 mOhm @ 9.9A, 10V
Vgs (a) (Max) @ Id :
3.5V @ 1.1mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
43nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
1520pF @ 100V
FET Feature :
-
Distrugerea puterii (Max) :
139W (Tc)
Temperatura de Operare :
-40°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
D²PAK (TO-263AB)
Pachet / Caz :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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