Vishay Semiconductor Diodes Division - NSB8JTHE3_A/P

KEY Part #: K6439150

NSB8JTHE3_A/P Preț (USD) [128710buc Stoc]

  • 1 pcs$0.28737
  • 1,000 pcs$0.26162

Numărul piesei:
NSB8JTHE3_A/P
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8A 600V Glass Psvtd AEC-Q101 Qualified
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Unijuncții programabile, Tranzistori - scop special, Tranzistori - IGBT - Arrays, Dioduri - Redresoare - Single, Tranzistori - FET, MOSFET - RF, Tranzistori - Bipolari (BJT) - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor and Tiristoare - TRIAC ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division NSB8JTHE3_A/P electronic components. NSB8JTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NSB8JTHE3_A/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSB8JTHE3_A/P Atributele produsului

Numărul piesei : NSB8JTHE3_A/P
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 600V 8A TO263AB
Serie : Automotive, AEC-Q101
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 600V
Curent - mediu rectificat (Io) : 8A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.1V @ 8A
Viteză : Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) : -
Scurgeri reversibile de curent @ Vr : 10µA @ 600V
Capacitate @ Vr, F : 55pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor : TO-263AB
Temperatura de funcționare - Junction : -55°C ~ 150°C

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