Vishay Semiconductor Diodes Division - UG12JT-E3/45

KEY Part #: K6441280

UG12JT-E3/45 Preț (USD) [51954buc Stoc]

  • 1 pcs$0.73167
  • 10 pcs$0.65684
  • 25 pcs$0.61979
  • 100 pcs$0.52806
  • 250 pcs$0.49582
  • 500 pcs$0.43384
  • 1,000 pcs$0.34004
  • 2,500 pcs$0.31658
  • 5,000 pcs$0.31267

Numărul piesei:
UG12JT-E3/45
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 600V 12A TO220AC.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Dioduri - punți redresoare, Tranzistori - Module IGBT, Tiristoare - SCR-uri, Tranzistori - FET, MOSFET - RF, Tiristoare - DIAC, SIDAC, Modulele Power Driver and Tranzistori - Bipolari (BJT) - RF ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division UG12JT-E3/45 electronic components. UG12JT-E3/45 can be shipped within 24 hours after order. If you have any demands for UG12JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG12JT-E3/45 Atributele produsului

Numărul piesei : UG12JT-E3/45
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 600V 12A TO220AC
Serie : -
Starea parțială : Obsolete
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 600V
Curent - mediu rectificat (Io) : 12A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.75V @ 12A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 50ns
Scurgeri reversibile de curent @ Vr : 30µA @ 600V
Capacitate @ Vr, F : -
Tipul de montare : Through Hole
Pachet / Caz : TO-220-2
Pachetul dispozitivelor furnizorilor : TO-220AC
Temperatura de funcționare - Junction : 150°C (Max)

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