[12754buc Stoc]
- Numărul piesei:
- IRF7807D1TR
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N-CH 30V 8.3A 8-SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - IGBT - Single, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - IGBT - Arrays, Dioduri - RF, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - RF and Dioduri - Zener - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IRF7807D1TR electronic components. IRF7807D1TR can be shipped within 24 hours after order. If you have any demands for IRF7807D1TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7807D1TR Atributele produsului
Numărul piesei :
IRF7807D1TR
Producător :
Infineon Technologies
Descriere :
MOSFET N-CH 30V 8.3A 8-SOIC
Serie :
FETKY™
Starea parțială :
Obsolete
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
8.3A (Ta)
Tensiunea de transmisie (valorile max. :
4.5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7A, 4.5V
Vgs (a) (Max) @ Id :
1V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
17nC @ 5V
Vgs (Max) :
±12V
Capacitate de intrare (Ciss) (Max) @ Vds :
-
FET Feature :
Schottky Diode (Isolated)
Distrugerea puterii (Max) :
2.5W (Ta)
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
8-SO
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
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