TK10A60W,S4VX Preț (USD) [33399buc Stoc]
- 1 pcs$1.35736
- Numărul piesei:
- TK10A60W,S4VX
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 600V 9.7A TO-220SIS.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Zener - Single, Tranzistori - Bipolari (BJT) - RF, Dioduri - Redresoare - Arrays, Dioduri - RF, Tranzistori - scop special, Tranzistori - IGBT - Single, Dioduri - Redresoare - Single and Tiristoare - DIAC, SIDAC ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TK10A60W,S4VX electronic components. TK10A60W,S4VX can be shipped within 24 hours after order. If you have any demands for TK10A60W,S4VX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10A60W,S4VX Atributele produsului
Numărul piesei :
TK10A60W,S4VX
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 600V 9.7A TO-220SIS
Serie :
DTMOSIV
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
600V
Curent - scurgere continuă (Id) la 25 ° C :
9.7A (Ta)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 4.9A, 10V
Vgs (a) (Max) @ Id :
3.7V @ 500µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Capacitate de intrare (Ciss) (Max) @ Vds :
700pF @ 300V
FET Feature :
Super Junction
Distrugerea puterii (Max) :
30W (Tc)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
TO-220SIS
Pachet / Caz :
TO-220-3 Full Pack
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