IPAN60R800CEXKSA1 Preț (USD) [85018buc Stoc]
- 1 pcs$0.40138
- 10 pcs$0.33736
- 100 pcs$0.26649
- 500 pcs$0.20665
- 1,000 pcs$0.16314
- Numărul piesei:
- IPAN60R800CEXKSA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET NCH 600V 8.4A TO220.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - JFET-uri, Modulele Power Driver, Dioduri - Zener - Arrays, Tranzistori - FET, MOSFET - Single, Tiristoare - SCR-uri, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - IGBT - Single and Tranzistori - Bipolari (BJT) - Arrays ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPAN60R800CEXKSA1 electronic components. IPAN60R800CEXKSA1 can be shipped within 24 hours after order. If you have any demands for IPAN60R800CEXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPAN60R800CEXKSA1 Atributele produsului
Numărul piesei :
IPAN60R800CEXKSA1
Producător :
Infineon Technologies
Descriere :
MOSFET NCH 600V 8.4A TO220
Serie :
CoolMOS™
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
600V
Curent - scurgere continuă (Id) la 25 ° C :
8.4A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
800 mOhm @ 2A, 10V
Vgs (a) (Max) @ Id :
3.5V @ 170µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
17.2nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
373pF @ 100V
FET Feature :
Super Junction
Distrugerea puterii (Max) :
27W (Tc)
Temperatura de Operare :
-40°C ~ 150°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
PG-TO220 Full Pack
Pachet / Caz :
TO-220-3 Full Pack
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