Microsemi Corporation - JANS1N3595US

KEY Part #: K6441508

Categorii de familii:: KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, Dioduri - punți redresoare, Dioduri - Zener - Arrays, Tranzistori - JFET-uri, Dioduri - Zener - Single, Tranzistori - FET, MOSFET - Arrays, Dioduri - Redresoare - Arrays and Tranzistori - Bipolari (BJT) - Single ...

Avantaj competitiv:: We specialize in Microsemi Corporation JANS1N3595US electronic components. JANS1N3595US can be shipped within 24 hours after order. If you have any demands for JANS1N3595US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

Numărul piesei : JANS1N3595US

Producător : Microsemi Corporation

Descriere : DIODE GEN PURP 200MA DO35

Serie : Military, MIL-S-19500-241

Starea parțială : Active

Tipul diodei : Standard

Tensiune - DC înapoi (Vr) (Max) : -

Curent - mediu rectificat (Io) : 200mA (DC)

Tensiune - înainte (Vf) (Max) @ Dacă : 1V @ 200mA

Viteză : Small Signal =< 200mA (Io), Any Speed

Timp de recuperare invers (trr) : 3µs

Scurgeri reversibile de curent @ Vr : 1nA @ 125V

Capacitate @ Vr, F : -

Tipul de montare : Surface Mount

Pachet / Caz : SQ-MELF, B

Pachetul dispozitivelor furnizorilor : B, SQ-MELF

Temperatura de funcționare - Junction : -65°C ~ 150°C

Poți fi, de asemenea, interesat

CDBDSC8650-G

Comchip Technology

DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 8A 650V
CDBDSC10650-G

Comchip Technology

DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 650V
VS-8EWS10STRPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK.
VS-8EWS10STRRPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK.
MBRB10H90CTHE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 5A TO263AB.
MBRB10H90HE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A TO263AB.

Piese calde