Vishay Semiconductor Diodes Division - RS1JHE3_A/I

KEY Part #: K6432870

RS1JHE3_A/I Preț (USD) [854622buc Stoc]

  • 1 pcs$0.04328
  • 7,500 pcs$0.04003

Numărul piesei:
RS1JHE3_A/I
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 600V 1A DO214AC. Rectifiers 600 Volt 1.0A 250ns 37 Amp IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Tiristoare - DIAC, SIDAC, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - IGBT - Arrays, Tranzistori - FET, MOSFET - Single, Tiristoare - SCR - Module, Modulele Power Driver and Tranzistori - FET, MOSFET - RF ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division RS1JHE3_A/I electronic components. RS1JHE3_A/I can be shipped within 24 hours after order. If you have any demands for RS1JHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1JHE3_A/I Atributele produsului

Numărul piesei : RS1JHE3_A/I
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 600V 1A DO214AC
Serie : Automotive, AEC-Q101
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 600V
Curent - mediu rectificat (Io) : 1A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.3V @ 1A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 250ns
Scurgeri reversibile de curent @ Vr : 5µA @ 600V
Capacitate @ Vr, F : 7pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-214AC, SMA
Pachetul dispozitivelor furnizorilor : DO-214AC (SMA)
Temperatura de funcționare - Junction : -55°C ~ 150°C

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