TPWR8503NL,L1Q Preț (USD) [64230buc Stoc]
- 1 pcs$0.61529
- 5,000 pcs$0.61223
- Numărul piesei:
- TPWR8503NL,L1Q
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 30V 150A 8DSOP.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - punți redresoare, Tranzistori - IGBT - Single, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tiristoare - DIAC, SIDAC, Tranzistori - Module IGBT, Dioduri - Zener - Single and Tranzistori - IGBT - Arrays ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TPWR8503NL,L1Q electronic components. TPWR8503NL,L1Q can be shipped within 24 hours after order. If you have any demands for TPWR8503NL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPWR8503NL,L1Q Atributele produsului
Numărul piesei :
TPWR8503NL,L1Q
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 30V 150A 8DSOP
Serie :
U-MOSVIII-H
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
150A (Tc)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
0.85 mOhm @ 50A, 10V
Vgs (a) (Max) @ Id :
2.3V @ 1mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
74nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
6900pF @ 15V
FET Feature :
-
Distrugerea puterii (Max) :
800mW (Ta), 142W (Tc)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
8-DSOP Advance
Pachet / Caz :
8-PowerVDFN
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