Comchip Technology - CDBJFSC5650-G

KEY Part #: K6441904

CDBJFSC5650-G Preț (USD) [29974buc Stoc]

  • 1 pcs$1.37498

Numărul piesei:
CDBJFSC5650-G
Producător:
Comchip Technology
Descriere detaliata:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Single, Tranzistori - FET, MOSFET - RF, Dioduri - Zener - Arrays, Tranzistori - scop special, Tiristoare - SCR-uri, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tiristoare - SCR - Module and Modulele Power Driver ...
Avantaj competitiv:
We specialize in Comchip Technology CDBJFSC5650-G electronic components. CDBJFSC5650-G can be shipped within 24 hours after order. If you have any demands for CDBJFSC5650-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBJFSC5650-G Atributele produsului

Numărul piesei : CDBJFSC5650-G
Producător : Comchip Technology
Descriere : DIODE SILICON CARBIDE POWER SCHO
Serie : -
Starea parțială : Active
Tipul diodei : Silicon Carbide Schottky
Tensiune - DC înapoi (Vr) (Max) : 650V
Curent - mediu rectificat (Io) : 5A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1.7V @ 5A
Viteză : No Recovery Time > 500mA (Io)
Timp de recuperare invers (trr) : 0ns
Scurgeri reversibile de curent @ Vr : 100µA @ 650V
Capacitate @ Vr, F : 430pF @ 0V, 1MHz
Tipul de montare : Through Hole
Pachet / Caz : TO-220-2 Full Pack
Pachetul dispozitivelor furnizorilor : TO-220F
Temperatura de funcționare - Junction : -55°C ~ 175°C

Poți fi, de asemenea, interesat
  • CDBDSC51200-G

    Comchip Technology

    DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 1200V

  • VS-30EPH06-N3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 30A TO247AC. Rectifiers 30A 600V Hyperfast

  • VS-E4PU6006L-N3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 60A TO247AD. Rectifiers 600V 60A FRED Pt TO-247 LL 2L

  • VS-60APH03-N3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 60A TO247AC. Rectifiers 60A 300V Hyperfast 28ns FRED Pt

  • VS-30APF10-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 30A TO247. Rectifiers New Input Diodes - TO-247-e3

  • VS-60APU04-N3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 60A TO247AC. Rectifiers 60A 400V Ultrafast 50ns FRED Pt