Everlight Electronics Co Ltd - ALS-PT19-315C/L177/TR8

KEY Part #: K7359524

ALS-PT19-315C/L177/TR8 Preț (USD) [632328buc Stoc]

  • 1 pcs$0.05849
  • 4,000 pcs$0.05677
  • 8,000 pcs$0.05161
  • 12,000 pcs$0.04817
  • 28,000 pcs$0.04645

Numărul piesei:
ALS-PT19-315C/L177/TR8
Producător:
Everlight Electronics Co Ltd
Descriere detaliata:
LIGHT SENSOR AMBIENT SMD.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Magnete - Multipurpose, Senzori optici - detectoare foto - celule CdS, Senzori optici - Fototranzistori, Senzori optici - ieșire logică - reflexivă, Traductoarele actuale, Senzori de imagine, Camera, Senzori de mișcare - Accelerometre and Senzori de șoc ...
Avantaj competitiv:
We specialize in Everlight Electronics Co Ltd ALS-PT19-315C/L177/TR8 electronic components. ALS-PT19-315C/L177/TR8 can be shipped within 24 hours after order. If you have any demands for ALS-PT19-315C/L177/TR8, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ALS-PT19-315C/L177/TR8 Atributele produsului

Numărul piesei : ALS-PT19-315C/L177/TR8
Producător : Everlight Electronics Co Ltd
Descriere : LIGHT SENSOR AMBIENT SMD
Serie : -
Starea parțială : Active
Tensiune - emițător colector (Max) : 5.5V
Curent - Colector (Ic) (Max) : -
Curent - Întuneric (Id) (Max) : 100nA
Lungime de undă : 630nm
Unghi de vedere : -
Putere - Max : -
Tipul de montare : Surface Mount
Orientare : -
Temperatura de Operare : -40°C ~ 85°C (TA)
Pachet / Caz : 2-SMD, No Lead
Poți fi, de asemenea, interesat
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.