Vishay Semiconductor Diodes Division - VS-GB75LP120N

KEY Part #: K6533617

[773buc Stoc]


    Numărul piesei:
    VS-GB75LP120N
    Producător:
    Vishay Semiconductor Diodes Division
    Descriere detaliata:
    IGBT 1200V 170A 658W INT-A-PAK.
    Timpul de livrare standard al producătorului:
    In stoc
    Termen de valabilitate:
    Un an
    Chip From:
    Hong Kong
    RoHS:
    Modalitate de plată:
    Mod de expediere:
    Categorii de familii:
    KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - Bipolari (BJT) - Single, Tiristoare - DIAC, SIDAC, Tranzistori - Bipolari (BJT) - RF, Dioduri - Redresoare - Arrays, Dioduri - RF, Dioduri - punți redresoare and Dioduri - Redresoare - Single ...
    Avantaj competitiv:
    We specialize in Vishay Semiconductor Diodes Division VS-GB75LP120N electronic components. VS-GB75LP120N can be shipped within 24 hours after order. If you have any demands for VS-GB75LP120N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VS-GB75LP120N Atributele produsului

    Numărul piesei : VS-GB75LP120N
    Producător : Vishay Semiconductor Diodes Division
    Descriere : IGBT 1200V 170A 658W INT-A-PAK
    Serie : -
    Starea parțială : Obsolete
    Tip IGBT : -
    configurație : Single
    Tensiune - emițător colector (Max) : 1200V
    Curent - Colector (Ic) (Max) : 170A
    Putere - Max : 658W
    Vce (pe) (Max) @ Vge, Ic : 1.82V @ 15V, 75A (Typ)
    Curentul curent - colector (maxim) : 1mA
    Capacitate de intrare (Cies) @ Vce : 5.52nF @ 25V
    Intrare : Standard
    Termistor NTC : No
    Temperatura de Operare : -40°C ~ 150°C (TJ)
    Tipul de montare : Chassis Mount
    Pachet / Caz : INT-A-PAK (3 + 4)
    Pachetul dispozitivelor furnizorilor : INT-A-PAK

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