IPS70R950CEAKMA1 Preț (USD) [108745buc Stoc]
- 1 pcs$0.31244
- 10 pcs$0.27329
- 100 pcs$0.21084
- 500 pcs$0.15618
- 1,000 pcs$0.12495
- Numărul piesei:
- IPS70R950CEAKMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET NCH 700V 7.4A TO251.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Single, Tranzistori - Module IGBT, Dioduri - punți redresoare, Dioduri - RF, Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - Zener - Arrays, Tranzistori - FET, MOSFET - Single and Tiristoare - DIAC, SIDAC ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPS70R950CEAKMA1 electronic components. IPS70R950CEAKMA1 can be shipped within 24 hours after order. If you have any demands for IPS70R950CEAKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS70R950CEAKMA1 Atributele produsului
Numărul piesei :
IPS70R950CEAKMA1
Producător :
Infineon Technologies
Descriere :
MOSFET NCH 700V 7.4A TO251
Serie :
CoolMOS™
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
700V
Curent - scurgere continuă (Id) la 25 ° C :
7.4A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
950 mOhm @ 1.5A, 10V
Vgs (a) (Max) @ Id :
3.5V @ 150µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
15.3nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
328pF @ 100V
FET Feature :
Super Junction
Distrugerea puterii (Max) :
68W (Tc)
Temperatura de Operare :
-40°C ~ 150°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
PG-TO251
Pachet / Caz :
TO-251-3 Stub Leads, IPak
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