NVD6416ANLT4G-VF01 Preț (USD) [209914buc Stoc]
- 1 pcs$0.17620
- 2,500 pcs$0.16019
- Numărul piesei:
- NVD6416ANLT4G-VF01
- Producător:
- ON Semiconductor
- Descriere detaliata:
- MOSFET N-CH 100V 19A DPAK.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Tiristoare - SCR-uri, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tiristoare - DIAC, SIDAC, Tranzistori - IGBT - Arrays, Dioduri - Redresoare - Single and Dioduri - Zener - Arrays ...
- Avantaj competitiv:
- We specialize in ON Semiconductor NVD6416ANLT4G-VF01 electronic components. NVD6416ANLT4G-VF01 can be shipped within 24 hours after order. If you have any demands for NVD6416ANLT4G-VF01, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVD6416ANLT4G-VF01 Atributele produsului
Numărul piesei :
NVD6416ANLT4G-VF01
Producător :
ON Semiconductor
Descriere :
MOSFET N-CH 100V 19A DPAK
Serie :
-
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
100V
Curent - scurgere continuă (Id) la 25 ° C :
19A (Tc)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
74 mOhm @ 19A, 10V
Vgs (a) (Max) @ Id :
2.2V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
1000pF @ 25V
FET Feature :
-
Distrugerea puterii (Max) :
71W (Tc)
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
DPAK-3
Pachet / Caz :
TO-252-3, DPak (2 Leads + Tab), SC-63
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