IRFS4010TRL7PP Preț (USD) [40303buc Stoc]
- 1 pcs$0.97016
- 800 pcs$0.93132
- Numărul piesei:
- IRFS4010TRL7PP
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N-CH 100V 190A D2PAK-7.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Redresoare - Arrays, Tranzistori - FET, MOSFET - RF, Dioduri - RF, Tranzistori - Bipolari (BJT) - Single, Tranzistori - scop special, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - RF and Tranzistori - IGBT - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IRFS4010TRL7PP electronic components. IRFS4010TRL7PP can be shipped within 24 hours after order. If you have any demands for IRFS4010TRL7PP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFS4010TRL7PP Atributele produsului
Numărul piesei :
IRFS4010TRL7PP
Producător :
Infineon Technologies
Descriere :
MOSFET N-CH 100V 190A D2PAK-7
Serie :
HEXFET®
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
100V
Curent - scurgere continuă (Id) la 25 ° C :
190A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
4 mOhm @ 110A, 10V
Vgs (a) (Max) @ Id :
4V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
230nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
9830pF @ 50V
FET Feature :
-
Distrugerea puterii (Max) :
380W (Tc)
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
D2PAK
Pachet / Caz :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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