Vishay Semiconductor Diodes Division - VBT1080C-E3/4W

KEY Part #: K6471930

VBT1080C-E3/4W Preț (USD) [215486buc Stoc]

  • 1 pcs$0.18113
  • 2,000 pcs$0.18023

Numărul piesei:
VBT1080C-E3/4W
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE SCHOTTKY 10A 80V TO-263AB. Schottky Diodes & Rectifiers 10A,80V,Trench
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - scop special, Dioduri - punți redresoare, Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - Bipolari (BJT) - Arrays and Tiristoare - TRIAC ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VBT1080C-E3/4W electronic components. VBT1080C-E3/4W can be shipped within 24 hours after order. If you have any demands for VBT1080C-E3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VBT1080C-E3/4W Atributele produsului

Numărul piesei : VBT1080C-E3/4W
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE SCHOTTKY 10A 80V TO-263AB
Serie : TMBS®
Starea parțială : Active
Configurarea diodelor : 1 Pair Common Cathode
Tipul diodei : Schottky
Tensiune - DC înapoi (Vr) (Max) : 80V
Curent - Mediu rectificat (Io) (pe diodă) : 5A
Tensiune - înainte (Vf) (Max) @ Dacă : 720mV @ 5A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : -
Scurgeri reversibile de curent @ Vr : 400µA @ 80V
Temperatura de funcționare - Junction : -55°C ~ 150°C
Tipul de montare : Surface Mount
Pachet / Caz : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor : TO-263AB

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