RGF1M-E3/67A Preț (USD) [550125buc Stoc]
- 1 pcs$0.07095
- 1,500 pcs$0.07060
- 3,000 pcs$0.06437
- 7,500 pcs$0.06021
- 10,500 pcs$0.05606
- Numărul piesei:
- RGF1M-E3/67A
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 1KV 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 1000Volt 500ns 30 Amp IFSM
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - scop special, Tiristoare - TRIAC, Dioduri - punți redresoare, Tranzistori - FET, MOSFET - RF, Modulele Power Driver, Dioduri - RF, Dioduri - Zener - Single and Tranzistori - FET, MOSFET - Arrays ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division RGF1M-E3/67A electronic components. RGF1M-E3/67A can be shipped within 24 hours after order. If you have any demands for RGF1M-E3/67A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGF1M-E3/67A Atributele produsului
Numărul piesei :
RGF1M-E3/67A
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 1KV 1A DO214BA
Serie :
SUPERECTIFIER®
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
1000V
Curent - mediu rectificat (Io) :
1A
Tensiune - înainte (Vf) (Max) @ Dacă :
1.3V @ 1A
Viteză :
Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
500ns
Scurgeri reversibile de curent @ Vr :
5µA @ 1000V
Capacitate @ Vr, F :
8.5pF @ 4V, 1MHz
Tipul de montare :
Surface Mount
Pachet / Caz :
DO-214BA
Pachetul dispozitivelor furnizorilor :
DO-214BA (GF1)
Temperatura de funcționare - Junction :
-65°C ~ 175°C
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