Global Power Technologies Group - GHXS030A120S-D1E

KEY Part #: K6538087

GHXS030A120S-D1E Preț (USD) [907buc Stoc]

  • 1 pcs$57.27744

Numărul piesei:
GHXS030A120S-D1E
Producător:
Global Power Technologies Group
Descriere detaliata:
BRIDGE RECT 1P 1.2KV 30A SOT227.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Unijuncții programabile, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - Bipolari (BJT) - Single, Tranzistori - Module IGBT, Tranzistori - IGBT - Arrays, Tranzistori - FET, MOSFET - Single, Tiristoare - SCR - Module and Tranzistori - FET, MOSFET - RF ...
Avantaj competitiv:
We specialize in Global Power Technologies Group GHXS030A120S-D1E electronic components. GHXS030A120S-D1E can be shipped within 24 hours after order. If you have any demands for GHXS030A120S-D1E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GHXS030A120S-D1E Atributele produsului

Numărul piesei : GHXS030A120S-D1E
Producător : Global Power Technologies Group
Descriere : BRIDGE RECT 1P 1.2KV 30A SOT227
Serie : -
Starea parțială : Active
Tipul diodei : Single Phase
Tehnologie : Silicon Carbide Schottky
Voltaj - vârf înapoi (Max) : 1.2kV
Curent - mediu rectificat (Io) : 30A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.7V @ 30A
Scurgeri reversibile de curent @ Vr : 200µA @ 1200V
Temperatura de Operare : -55°C ~ 175°C (TJ)
Tipul de montare : Chassis Mount
Pachet / Caz : SOT-227-4, miniBLOC
Pachetul dispozitivelor furnizorilor : SOT-227

Poți fi, de asemenea, interesat
  • RMB2S-E3/80

    Vishay Semiconductor Diodes Division

    BRIDGE RECT 3P 200V TO269AA. Bridge Rectifiers 0.5 Amp 200 Volt

  • B6M-E3/45

    Vishay Semiconductor Diodes Division

    BRIDGE RECT 1P 600V 500MA MBM. Bridge Rectifiers 0.5 Amp 600 Volt

  • B4M-E3/45

    Vishay Semiconductor Diodes Division

    BRIDGE RECT 1P 400V 500MA MBM. Bridge Rectifiers 0.5 Amp 400 Volt

  • MB2M-E3/45

    Vishay Semiconductor Diodes Division

    BRIDGE RECT 1P 200V 500MA MBM. Bridge Rectifiers 200 Volt 0.5 Amp 35 Amp IFSM

  • TSS4B03GHC2G

    Taiwan Semiconductor Corporation

    BRIDGE RECT 1PHASE 200V 4A TS4B.

  • GBL10 D2G

    Taiwan Semiconductor Corporation

    BRIDGE RECT 1PHASE 1KV 4A GBL. Bridge Rectifiers 4A 1000V Standard Bridge Rectif