VS-1EFH02HM3/I Preț (USD) [792956buc Stoc]
- 1 pcs$0.04665
- 10,000 pcs$0.04227
- 30,000 pcs$0.03887
- Numărul piesei:
- VS-1EFH02HM3/I
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Zener - Single, Tranzistori - FET, MOSFET - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tiristoare - TRIAC, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Redresoare - Arrays, Dioduri - Redresoare - Single and Tranzistori - Module IGBT ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division VS-1EFH02HM3/I electronic components. VS-1EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-1EFH02HM3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-1EFH02HM3/I Atributele produsului
Numărul piesei :
VS-1EFH02HM3/I
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 200V 1A DO219AB
Serie :
Automotive, AEC-Q101, FRED Pt®
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
200V
Curent - mediu rectificat (Io) :
1A
Tensiune - înainte (Vf) (Max) @ Dacă :
930mV @ 1A
Viteză :
Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
25ns
Scurgeri reversibile de curent @ Vr :
2µA @ 200V
Capacitate @ Vr, F :
-
Tipul de montare :
Surface Mount
Pachet / Caz :
DO-219AB
Pachetul dispozitivelor furnizorilor :
DO-219AB (SMF)
Temperatura de funcționare - Junction :
-55°C ~ 175°C
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DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
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