Vishay Semiconductor Diodes Division - VS-GB150TH120N

KEY Part #: K6533227

VS-GB150TH120N Preț (USD) [205buc Stoc]

  • 1 pcs$225.27883
  • 12 pcs$178.28846

Numărul piesei:
VS-GB150TH120N
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
IGBT 1200V 300A 1008W INT-A-PAK.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Tranzistori - Bipolari (BJT) - RF, Tranzistori - Module IGBT, Tiristoare - SCR-uri, Dioduri - RF, Tranzistori - IGBT - Arrays, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Tranzistori - Unijuncții programabile ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VS-GB150TH120N electronic components. VS-GB150TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB150TH120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB150TH120N Atributele produsului

Numărul piesei : VS-GB150TH120N
Producător : Vishay Semiconductor Diodes Division
Descriere : IGBT 1200V 300A 1008W INT-A-PAK
Serie : -
Starea parțială : Active
Tip IGBT : -
configurație : Half Bridge
Tensiune - emițător colector (Max) : 1200V
Curent - Colector (Ic) (Max) : 300A
Putere - Max : 1008W
Vce (pe) (Max) @ Vge, Ic : 2.35V @ 15V, 150A
Curentul curent - colector (maxim) : 5mA
Capacitate de intrare (Cies) @ Vce : 11nF @ 25V
Intrare : Standard
Termistor NTC : No
Temperatura de Operare : 150°C (TJ)
Tipul de montare : Chassis Mount
Pachet / Caz : Double INT-A-PAK (3 + 4)
Pachetul dispozitivelor furnizorilor : Double INT-A-PAK

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