Toshiba Semiconductor and Storage - TK31A60W,S4VX

KEY Part #: K6416546

TK31A60W,S4VX Preț (USD) [15256buc Stoc]

  • 1 pcs$2.98623
  • 50 pcs$2.97138

Numărul piesei:
TK31A60W,S4VX
Producător:
Toshiba Semiconductor and Storage
Descriere detaliata:
MOSFET N-CH 600V 30.8A TO-220SIS.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Modulele Power Driver, Tiristoare - SCR-uri, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - FET, MOSFET - Arrays, Dioduri - Capacitate variabilă (Varicaps, Varactor and Tranzistori - scop special ...
Avantaj competitiv:
We specialize in Toshiba Semiconductor and Storage TK31A60W,S4VX electronic components. TK31A60W,S4VX can be shipped within 24 hours after order. If you have any demands for TK31A60W,S4VX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK31A60W,S4VX Atributele produsului

Numărul piesei : TK31A60W,S4VX
Producător : Toshiba Semiconductor and Storage
Descriere : MOSFET N-CH 600V 30.8A TO-220SIS
Serie : DTMOSIV
Starea parțială : Active
Tipul FET : N-Channel
Tehnologie : MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) : 600V
Curent - scurgere continuă (Id) la 25 ° C : 30.8A (Ta)
Tensiunea de transmisie (valorile max. : 10V
Rds On (Max) @ Id, Vgs : 88 mOhm @ 15.4A, 10V
Vgs (a) (Max) @ Id : 3.7V @ 1.5mA
Chargeul prin poștă (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±30V
Capacitate de intrare (Ciss) (Max) @ Vds : 3000pF @ 300V
FET Feature : Super Junction
Distrugerea puterii (Max) : 45W (Tc)
Temperatura de Operare : 150°C (TJ)
Tipul de montare : Through Hole
Pachetul dispozitivelor furnizorilor : TO-220SIS
Pachet / Caz : TO-220-3 Full Pack

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