Vishay Semiconductor Diodes Division - EGL34DHE3_A/H

KEY Part #: K6457955

EGL34DHE3_A/H Preț (USD) [782736buc Stoc]

  • 1 pcs$0.04725

Numărul piesei:
EGL34DHE3_A/H
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 200V 500MA DO213. Rectifiers 0.5A,200V,50NS AEC-Q101 Qualified
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - JFET-uri, Dioduri - RF, Dioduri - Redresoare - Single, Tranzistori - IGBT - Single, Tranzistori - Module IGBT, Dioduri - Zener - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor and Tiristoare - SCR-uri ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division EGL34DHE3_A/H electronic components. EGL34DHE3_A/H can be shipped within 24 hours after order. If you have any demands for EGL34DHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGL34DHE3_A/H Atributele produsului

Numărul piesei : EGL34DHE3_A/H
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 200V 500MA DO213
Serie : Automotive, AEC-Q101, Superectifier®
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 200V
Curent - mediu rectificat (Io) : 500mA
Tensiune - înainte (Vf) (Max) @ Dacă : 1.25V @ 500mA
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 50ns
Scurgeri reversibile de curent @ Vr : 5µA @ 200V
Capacitate @ Vr, F : 7pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-213AA (Glass)
Pachetul dispozitivelor furnizorilor : DO-213AA (GL34)
Temperatura de funcționare - Junction : -65°C ~ 175°C

Poți fi, de asemenea, interesat
  • RGL34B-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34D-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213. Diodes - General Purpose, Power, Switching 200 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34B-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34J-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 500MA DO213. Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM

  • BYM07-200-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213. Rectifiers 0.5 Amp 200 Volt

  • BYM07-100-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5 Amp 100 Volt