Vishay Semiconductor Diodes Division - U1B-E3/5AT

KEY Part #: K6458174

U1B-E3/5AT Preț (USD) [924763buc Stoc]

  • 1 pcs$0.04000
  • 7,500 pcs$0.03699

Numărul piesei:
U1B-E3/5AT
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1.0 Amp 100 Volt 30 Amp IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Dioduri - RF, Tranzistori - FET, MOSFET - RF, Dioduri - Redresoare - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tiristoare - TRIAC, Tiristoare - DIAC, SIDAC and Tranzistori - JFET-uri ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division U1B-E3/5AT electronic components. U1B-E3/5AT can be shipped within 24 hours after order. If you have any demands for U1B-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

U1B-E3/5AT Atributele produsului

Numărul piesei : U1B-E3/5AT
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 100V 1A DO214AC
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 100V
Curent - mediu rectificat (Io) : 1A
Tensiune - înainte (Vf) (Max) @ Dacă : 920mV @ 1A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 24ns
Scurgeri reversibile de curent @ Vr : 5µA @ 100V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : DO-214AC, SMA
Pachetul dispozitivelor furnizorilor : DO-214AC (SMA)
Temperatura de funcționare - Junction : -55°C ~ 150°C

Poți fi, de asemenea, interesat
  • 1SS250(TE85L,F)

    Toshiba Semiconductor and Storage

    DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High

  • SE30AFG-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.4A DO221AC. Rectifiers 3.0A, 400V, ESD PROTECTION, SLIM SMA

  • SE30AFD-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1.4A DO221AC. Rectifiers 3.0A, 200V, ESD PROTECTION, SLIM SMA

  • SE30AFB-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.4A DO221AC. Rectifiers 3 Amp 100 volts ESD PROTECTION 13in

  • SE20AFJ-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 1.3A DO221AC. Rectifiers 2 Amp 600 volts ESD PROTECTION 13in

  • SE20AFGHM3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in