SSM6K217FE,LF Preț (USD) [944660buc Stoc]
- 1 pcs$0.17402
- 10 pcs$0.13724
- 100 pcs$0.09409
- 500 pcs$0.06453
- 1,000 pcs$0.04839
- Numărul piesei:
- SSM6K217FE,LF
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 40V 1.8A ES6.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - SCR-uri, Dioduri - Zener - Arrays, Tranzistori - IGBT - Arrays, Tranzistori - FET, MOSFET - Arrays, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Bipolari (BJT) - Arrays, Modulele Power Driver and Dioduri - Redresoare - Arrays ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage SSM6K217FE,LF electronic components. SSM6K217FE,LF can be shipped within 24 hours after order. If you have any demands for SSM6K217FE,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6K217FE,LF Atributele produsului
Numărul piesei :
SSM6K217FE,LF
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 40V 1.8A ES6
Serie :
U-MOSVII-H
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
40V
Curent - scurgere continuă (Id) la 25 ° C :
1.8A (Ta)
Tensiunea de transmisie (valorile max. :
1.8V, 8V
Rds On (Max) @ Id, Vgs :
195 mOhm @ 1A, 8V
Vgs (a) (Max) @ Id :
1.2V @ 1mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
1.1nC @ 4.2V
Vgs (Max) :
±12V
Capacitate de intrare (Ciss) (Max) @ Vds :
130pF @ 10V
FET Feature :
-
Distrugerea puterii (Max) :
500mW (Ta)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
ES6
Pachet / Caz :
SOT-563, SOT-666
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