Comchip Technology - CDBJSC5650-G

KEY Part #: K6441873

CDBJSC5650-G Preț (USD) [37862buc Stoc]

  • 1 pcs$1.03271

Numărul piesei:
CDBJSC5650-G
Producător:
Comchip Technology
Descriere detaliata:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - IGBT - Single, Tranzistori - JFET-uri, Tranzistori - Module IGBT, Tiristoare - SCR - Module, Tranzistori - scop special, Tranzistori - Bipolari (BJT) - Arrays, pre-biased and Tranzistori - FET, MOSFET - RF ...
Avantaj competitiv:
We specialize in Comchip Technology CDBJSC5650-G electronic components. CDBJSC5650-G can be shipped within 24 hours after order. If you have any demands for CDBJSC5650-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBJSC5650-G Atributele produsului

Numărul piesei : CDBJSC5650-G
Producător : Comchip Technology
Descriere : DIODE SILICON CARBIDE POWER SCHO
Serie : -
Starea parțială : Active
Tipul diodei : Silicon Carbide Schottky
Tensiune - DC înapoi (Vr) (Max) : 650V
Curent - mediu rectificat (Io) : 5A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1.7V @ 5A
Viteză : No Recovery Time > 500mA (Io)
Timp de recuperare invers (trr) : 0ns
Scurgeri reversibile de curent @ Vr : 100µA @ 650V
Capacitate @ Vr, F : 430pF @ 0V, 1MHz
Tipul de montare : Through Hole
Pachet / Caz : TO-220-2 Full Pack
Pachetul dispozitivelor furnizorilor : TO-220F
Temperatura de funcționare - Junction : -55°C ~ 175°C

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