Vishay Semiconductor Diodes Division - V35PWM12-M3/I

KEY Part #: K6427157

V35PWM12-M3/I Preț (USD) [147114buc Stoc]

  • 1 pcs$0.25142
  • 4,500 pcs$0.22674
  • 9,000 pcs$0.21594

Numărul piesei:
V35PWM12-M3/I
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE SCHOTTKY 120V 35A SLIMDPAK. Schottky Diodes & Rectifiers If(AV)35A Vrrm 120V TMBS eSMP Trench MOS
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - punți redresoare, Tiristoare - TRIAC, Tranzistori - Bipolari (BJT) - Single, Dioduri - Redresoare - Single, Tranzistori - IGBT - Single and Tranzistori - JFET-uri ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division V35PWM12-M3/I electronic components. V35PWM12-M3/I can be shipped within 24 hours after order. If you have any demands for V35PWM12-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V35PWM12-M3/I Atributele produsului

Numărul piesei : V35PWM12-M3/I
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE SCHOTTKY 120V 35A SLIMDPAK
Serie : eSMP®, TMBS®
Starea parțială : Active
Tipul diodei : Schottky
Tensiune - DC înapoi (Vr) (Max) : 120V
Curent - mediu rectificat (Io) : 35A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.05V @ 35A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : -
Scurgeri reversibile de curent @ Vr : 1.2mA @ 120V
Capacitate @ Vr, F : 2080pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : TO-252-3, DPak (2 Leads + Tab), SC-63
Pachetul dispozitivelor furnizorilor : SlimDPAK
Temperatura de funcționare - Junction : -40°C ~ 175°C

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