Vishay Semiconductor Diodes Division - FESB8GTHE3/45

KEY Part #: K6456552

FESB8GTHE3/45 Preț (USD) [134072buc Stoc]

  • 1 pcs$0.27588
  • 1,000 pcs$0.25116

Numărul piesei:
FESB8GTHE3/45
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 400V 8A TO263AB. Rectifiers 8.0A 400 Volt 50ns 125 Amp IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - RF, Dioduri - Zener - Single, Tranzistori - FET, MOSFET - RF and Dioduri - RF ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division FESB8GTHE3/45 electronic components. FESB8GTHE3/45 can be shipped within 24 hours after order. If you have any demands for FESB8GTHE3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB8GTHE3/45 Atributele produsului

Numărul piesei : FESB8GTHE3/45
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 400V 8A TO263AB
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 400V
Curent - mediu rectificat (Io) : 8A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.3V @ 8A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 50ns
Scurgeri reversibile de curent @ Vr : 10µA @ 400V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor : TO-263AB
Temperatura de funcționare - Junction : -55°C ~ 150°C

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