Vishay Semiconductor Diodes Division - RGP10GE-E3/54

KEY Part #: K6458253

RGP10GE-E3/54 Preț (USD) [1010386buc Stoc]

  • 1 pcs$0.03689
  • 5,500 pcs$0.03671
  • 11,000 pcs$0.03347
  • 27,500 pcs$0.03131
  • 55,000 pcs$0.02879

Numărul piesei:
RGP10GE-E3/54
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 400V 1A DO204AL. Diodes - General Purpose, Power, Switching 1.0A 400 Volt 150ns
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Tranzistori - Bipolari (BJT) - Single, Dioduri - RF, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - Unijuncții programabile, Tiristoare - SCR-uri, Tranzistori - JFET-uri and Tranzistori - IGBT - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division RGP10GE-E3/54 electronic components. RGP10GE-E3/54 can be shipped within 24 hours after order. If you have any demands for RGP10GE-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP10GE-E3/54 Atributele produsului

Numărul piesei : RGP10GE-E3/54
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 400V 1A DO204AL
Serie : SUPERECTIFIER®
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 400V
Curent - mediu rectificat (Io) : 1A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.3V @ 1A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 150ns
Scurgeri reversibile de curent @ Vr : 5µA @ 400V
Capacitate @ Vr, F : 15pF @ 4V, 1MHz
Tipul de montare : Through Hole
Pachet / Caz : DO-204AL, DO-41, Axial
Pachetul dispozitivelor furnizorilor : DO-204AL (DO-41)
Temperatura de funcționare - Junction : -65°C ~ 175°C

Poți fi, de asemenea, interesat
  • 1SS250(TE85L,F)

    Toshiba Semiconductor and Storage

    DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High

  • SE20AFB-M3/6A

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 Volts ESD PROTECTION

  • SE20AFD-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1.3A DO221AC. Rectifiers 2 Amp 200 volts ESD PROTECTION 13in

  • SE20AFB-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 volts ESD PROTECTION 13in

  • SE20AFG-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in

  • U1C-E3/5AT

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 1A DO214AC. Rectifiers 1.0 Amp 150 Volt 30 Amp IFSM