Vishay Semiconductor Diodes Division - VBT2060G-E3/8W

KEY Part #: K6471933

VBT2060G-E3/8W Preț (USD) [237333buc Stoc]

  • 1 pcs$0.16446
  • 1,600 pcs$0.16364

Numărul piesei:
VBT2060G-E3/8W
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE SCHOTTKY 10A 60V TO-263AB. Rectifiers 20A,60V,DUAL TRENCH SKY RECT.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Modulele Power Driver, Dioduri - Redresoare - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - FET, MOSFET - Single and Dioduri - Redresoare - Arrays ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VBT2060G-E3/8W electronic components. VBT2060G-E3/8W can be shipped within 24 hours after order. If you have any demands for VBT2060G-E3/8W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VBT2060G-E3/8W Atributele produsului

Numărul piesei : VBT2060G-E3/8W
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE SCHOTTKY 10A 60V TO-263AB
Serie : -
Starea parțială : Active
Configurarea diodelor : 1 Pair Common Cathode
Tipul diodei : Schottky
Tensiune - DC înapoi (Vr) (Max) : 60V
Curent - Mediu rectificat (Io) (pe diodă) : 10A
Tensiune - înainte (Vf) (Max) @ Dacă : 900mV @ 10A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : -
Scurgeri reversibile de curent @ Vr : 700µA @ 60V
Temperatura de funcționare - Junction : -55°C ~ 150°C
Tipul de montare : Surface Mount
Pachet / Caz : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor : TO-263AB

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