TPW4R50ANH,L1Q Preț (USD) [122345buc Stoc]
- 1 pcs$0.31034
- 5,000 pcs$0.30880
- Numărul piesei:
- TPW4R50ANH,L1Q
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 100V 92A 8DSOP.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - RF, Dioduri - Redresoare - Arrays, Dioduri - Zener - Single, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Redresoare - Single, Modulele Power Driver and Tranzistori - FET, MOSFET - Single ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TPW4R50ANH,L1Q electronic components. TPW4R50ANH,L1Q can be shipped within 24 hours after order. If you have any demands for TPW4R50ANH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPW4R50ANH,L1Q Atributele produsului
Numărul piesei :
TPW4R50ANH,L1Q
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 100V 92A 8DSOP
Serie :
U-MOSVIII-H
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
100V
Curent - scurgere continuă (Id) la 25 ° C :
92A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 46A, 10V
Vgs (a) (Max) @ Id :
4V @ 1mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
58nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
5200pF @ 50V
FET Feature :
-
Distrugerea puterii (Max) :
800mW (Ta), 142W (Tc)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
8-DSOP Advance
Pachet / Caz :
8-PowerVDFN
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