Numărul piesei :
RGT8NS65DGTL
Producător :
Rohm Semiconductor
Descriere :
IGBT 650V 8A 65W TO-263S
Tip IGBT :
Trench Field Stop
Tensiune - emițător colector (Max) :
650V
Curent - Colector (Ic) (Max) :
8A
Curent - colector pulsat (Icm) :
12A
Vce (pe) (Max) @ Vge, Ic :
2.1V @ 15V, 4A
Tip de introducere :
Standard
Td (pornire / oprire) @ 25 ° C :
17ns/69ns
Starea testului :
400V, 4A, 50 Ohm, 15V
Timp de recuperare invers (trr) :
40ns
Temperatura de Operare :
-40°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor :
LPDS (TO-263S)