GeneSiC Semiconductor - GB2X100MPS12-227

KEY Part #: K6469821

GB2X100MPS12-227 Preț (USD) [629buc Stoc]

  • 1 pcs$73.79442

Numărul piesei:
GB2X100MPS12-227
Producător:
GeneSiC Semiconductor
Descriere detaliata:
SIC DIODE 1200V 200A SOT-227. Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 200A SOT-227
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Single, Tiristoare - TRIAC, Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - RF, Tranzistori - IGBT - Arrays, Dioduri - Redresoare - Arrays and Tiristoare - SCR-uri ...
Avantaj competitiv:
We specialize in GeneSiC Semiconductor GB2X100MPS12-227 electronic components. GB2X100MPS12-227 can be shipped within 24 hours after order. If you have any demands for GB2X100MPS12-227, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GB2X100MPS12-227 Atributele produsului

Numărul piesei : GB2X100MPS12-227
Producător : GeneSiC Semiconductor
Descriere : SIC DIODE 1200V 200A SOT-227
Serie : -
Starea parțială : Active
Configurarea diodelor : 2 Independent
Tipul diodei : Silicon Carbide Schottky
Tensiune - DC înapoi (Vr) (Max) : 1200V
Curent - Mediu rectificat (Io) (pe diodă) : 185A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1.8V @ 100A
Viteză : No Recovery Time > 500mA (Io)
Timp de recuperare invers (trr) : 0ns
Scurgeri reversibile de curent @ Vr : 80µA @ 1200V
Temperatura de funcționare - Junction : -55°C ~ 175°C
Tipul de montare : Chassis Mount
Pachet / Caz : SOT-227-4, miniBLOC
Pachetul dispozitivelor furnizorilor : SOT-227
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