1N457TR Preț (USD) [3569519buc Stoc]
- 1 pcs$0.01144
- 10,000 pcs$0.01138
- 30,000 pcs$0.01024
- 50,000 pcs$0.00910
- 100,000 pcs$0.00853
- 250,000 pcs$0.00759
- Numărul piesei:
- 1N457TR
- Producător:
- ON Semiconductor
- Descriere detaliata:
- DIODE GEN PURP 70V 200MA DO35. Diodes - General Purpose, Power, Switching High Conductance Low Leakage
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - SCR-uri, Tranzistori - IGBT - Single, Dioduri - RF, Dioduri - punți redresoare, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Modulele Power Driver, Tranzistori - FET, MOSFET - Single and Tranzistori - Module IGBT ...
- Avantaj competitiv:
- We specialize in ON Semiconductor 1N457TR electronic components. 1N457TR can be shipped within 24 hours after order. If you have any demands for 1N457TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N457TR Atributele produsului
Numărul piesei :
1N457TR
Producător :
ON Semiconductor
Descriere :
DIODE GEN PURP 70V 200MA DO35
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
70V
Curent - mediu rectificat (Io) :
200mA
Tensiune - înainte (Vf) (Max) @ Dacă :
1V @ 20mA
Viteză :
Small Signal =< 200mA (Io), Any Speed
Timp de recuperare invers (trr) :
-
Scurgeri reversibile de curent @ Vr :
25nA @ 60V
Capacitate @ Vr, F :
8pF @ 0V, 1MHz
Tipul de montare :
Through Hole
Pachet / Caz :
DO-204AH, DO-35, Axial
Pachetul dispozitivelor furnizorilor :
DO-35
Temperatura de funcționare - Junction :
175°C (Max)
Cele mai recente știri
Poți fi, de asemenea, interesat
-
-
1N4150W-E3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
-
SE20FGHM3/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1.7A DO219AB. Rectifiers 2A,400V ESD PROTECTION, SMF RECT
-
ES07B-GS18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.2A DO219AB. Rectifiers 100 Volt 0.7A 25ns 30 Amp IFSM
-
BYM10-200-E3/97
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO213AB. Rectifiers 200 Volt 1.0 Amp Glass Passivated
-
BYM10-400-E3/97
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO213AB. Rectifiers 400 Volt 1.0 Amp Glass Passivated
Piese calde
- MBRB10H50HE3/45
- MBRB16H35-E3/81
- GP10KE-M3/73
- 1N4005-N-0-2-BP
- 1N4003 BK
- IRD3CH31DB6
- SS310HE-TP
- CLL914 BK
- JANTX1N6761UR-1
- GP10-4003E-M3/54
- EGP10F-M3/54
- VS-30WQ06FNTRLPBF
- UH1B-E3/61T
- MBRF7H60HE3/45
- RGP15DHE3/54
- RB420D-TP
- VS-90SQ045TR
- DGP20HE3/54
- 1N5622GP-E3/73
- U1GWJ49(TE12L,F)
- STTH3R04
- 2A02-T
- STTH10R04G
- FFPF04U150STU
- VS-20L15TPBF
- MBR2515L
- MBR845RL
- B280-13
- 60CPF10
- 40EPS08
- MA3X72100L
- MA2J11600L
- DL4001
- IDD15E60BUMA1
- 2A01-TP
- IDW30E60AFKSA1
- RGP02-14E-E3/73
- HS5M M6G
- GL41DHE3/97
- SE15PD-M3/85A