SIDC105D120H8X1SA1 Preț (USD) [6845buc Stoc]
- 1 pcs$6.01996
- Numărul piesei:
- SIDC105D120H8X1SA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- DIODE GEN PURP 1.2KV 200A WAFER.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Arrays, Tiristoare - DIAC, SIDAC, Dioduri - Zener - Arrays, Dioduri - Redresoare - Single, Dioduri - punți redresoare, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Module IGBT and Tranzistori - FET, MOSFET - Arrays ...
- Avantaj competitiv:
- We specialize in Infineon Technologies SIDC105D120H8X1SA1 electronic components. SIDC105D120H8X1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC105D120H8X1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDC105D120H8X1SA1 Atributele produsului
Numărul piesei :
SIDC105D120H8X1SA1
Producător :
Infineon Technologies
Descriere :
DIODE GEN PURP 1.2KV 200A WAFER
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
1200V
Curent - mediu rectificat (Io) :
200A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă :
1.41V @ 45A
Viteză :
Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
-
Scurgeri reversibile de curent @ Vr :
27µA @ 1200V
Capacitate @ Vr, F :
-
Tipul de montare :
Surface Mount
Pachet / Caz :
Die
Pachetul dispozitivelor furnizorilor :
Sawn on foil
Temperatura de funcționare - Junction :
-40°C ~ 175°C
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