Infineon Technologies - SIDC105D120H8X1SA1

KEY Part #: K6431142

SIDC105D120H8X1SA1 Preț (USD) [6845buc Stoc]

  • 1 pcs$6.01996

Numărul piesei:
SIDC105D120H8X1SA1
Producător:
Infineon Technologies
Descriere detaliata:
DIODE GEN PURP 1.2KV 200A WAFER.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Zener - Arrays, Tiristoare - DIAC, SIDAC, Tranzistori - IGBT - Arrays, Dioduri - punți redresoare, Modulele Power Driver, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - Zener - Single and Tiristoare - SCR-uri ...
Avantaj competitiv:
We specialize in Infineon Technologies SIDC105D120H8X1SA1 electronic components. SIDC105D120H8X1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC105D120H8X1SA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIDC105D120H8X1SA1 Atributele produsului

Numărul piesei : SIDC105D120H8X1SA1
Producător : Infineon Technologies
Descriere : DIODE GEN PURP 1.2KV 200A WAFER
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 1200V
Curent - mediu rectificat (Io) : 200A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1.41V @ 45A
Viteză : Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) : -
Scurgeri reversibile de curent @ Vr : 27µA @ 1200V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : Die
Pachetul dispozitivelor furnizorilor : Sawn on foil
Temperatura de funcționare - Junction : -40°C ~ 175°C

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