DF200R12W1H3B27BOMA1 Preț (USD) [1809buc Stoc]
- 1 pcs$23.94315
- Numărul piesei:
- DF200R12W1H3B27BOMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- IGBT MODULE VCES 1200V 200A.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - scop special, Tiristoare - DIAC, SIDAC, Dioduri - Redresoare - Single, Tranzistori - IGBT - Arrays, Dioduri - RF and Tranzistori - IGBT - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies DF200R12W1H3B27BOMA1 electronic components. DF200R12W1H3B27BOMA1 can be shipped within 24 hours after order. If you have any demands for DF200R12W1H3B27BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF200R12W1H3B27BOMA1 Atributele produsului
Numărul piesei :
DF200R12W1H3B27BOMA1
Producător :
Infineon Technologies
Descriere :
IGBT MODULE VCES 1200V 200A
Serie :
-
Starea parțială :
Active
Tip IGBT :
-
configurație :
2 Independent
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
30A
Putere - Max :
375W
Vce (pe) (Max) @ Vge, Ic :
1.3V @ 15V, 30A
Curentul curent - colector (maxim) :
1mA
Capacitate de intrare (Cies) @ Vce :
2nF @ 25V
Intrare :
Standard
Termistor NTC :
Yes
Temperatura de Operare :
-40°C ~ 150°C
Tipul de montare :
Chassis Mount
Pachet / Caz :
Module
Pachetul dispozitivelor furnizorilor :
Module
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