Toshiba Semiconductor and Storage - 1SS403,H3F

KEY Part #: K6452925

1SS403,H3F Preț (USD) [1505981buc Stoc]

  • 1 pcs$0.02592
  • 3,000 pcs$0.02579
  • 6,000 pcs$0.02242
  • 15,000 pcs$0.01906
  • 30,000 pcs$0.01794
  • 75,000 pcs$0.01682

Numărul piesei:
1SS403,H3F
Producător:
Toshiba Semiconductor and Storage
Descriere detaliata:
DIODE GEN PURP 200V 100MA USC. Diodes - General Purpose, Power, Switching USC SW DIODE IFM=300mA
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Arrays, Tranzistori - Bipolari (BJT) - Arrays, Modulele Power Driver, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Unijuncții programabile, Dioduri - Zener - Single, Dioduri - Redresoare - Arrays and Dioduri - Redresoare - Single ...
Avantaj competitiv:
We specialize in Toshiba Semiconductor and Storage 1SS403,H3F electronic components. 1SS403,H3F can be shipped within 24 hours after order. If you have any demands for 1SS403,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS403,H3F Atributele produsului

Numărul piesei : 1SS403,H3F
Producător : Toshiba Semiconductor and Storage
Descriere : DIODE GEN PURP 200V 100MA USC
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 200V
Curent - mediu rectificat (Io) : 100mA
Tensiune - înainte (Vf) (Max) @ Dacă : 1.2V @ 100mA
Viteză : Small Signal =< 200mA (Io), Any Speed
Timp de recuperare invers (trr) : 60ns
Scurgeri reversibile de curent @ Vr : 1µA @ 200V
Capacitate @ Vr, F : 3pF @ 0V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : SC-76, SOD-323
Pachetul dispozitivelor furnizorilor : USC
Temperatura de funcționare - Junction : 125°C (Max)

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