GeneSiC Semiconductor - GB10SLT12-252

KEY Part #: K6454697

GB10SLT12-252 Preț (USD) [15875buc Stoc]

  • 1 pcs$3.60550
  • 5,025 pcs$3.58756

Numărul piesei:
GB10SLT12-252
Producător:
GeneSiC Semiconductor
Descriere detaliata:
DIODE SCHOTTKY 1.2KV 10A TO252. Schottky Diodes & Rectifiers 1200V - 10A SiC Schottky Rect.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Dioduri - Redresoare - Single, Tranzistori - Unijuncții programabile, Tranzistori - JFET-uri, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - Module IGBT, Dioduri - Zener - Arrays and Tranzistori - FET, MOSFET - Arrays ...
Avantaj competitiv:
We specialize in GeneSiC Semiconductor GB10SLT12-252 electronic components. GB10SLT12-252 can be shipped within 24 hours after order. If you have any demands for GB10SLT12-252, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GB10SLT12-252 Atributele produsului

Numărul piesei : GB10SLT12-252
Producător : GeneSiC Semiconductor
Descriere : DIODE SCHOTTKY 1.2KV 10A TO252
Serie : -
Starea parțială : Not For New Designs
Tipul diodei : Silicon Carbide Schottky
Tensiune - DC înapoi (Vr) (Max) : 1200V
Curent - mediu rectificat (Io) : 10A
Tensiune - înainte (Vf) (Max) @ Dacă : 2V @ 10A
Viteză : No Recovery Time > 500mA (Io)
Timp de recuperare invers (trr) : 0ns
Scurgeri reversibile de curent @ Vr : 250µA @ 1200V
Capacitate @ Vr, F : 520pF @ 1V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : TO-252-3, DPak (2 Leads + Tab), SC-63
Pachetul dispozitivelor furnizorilor : TO-252
Temperatura de funcționare - Junction : -55°C ~ 175°C
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