1N6483-E3/97 Preț (USD) [1025340buc Stoc]
- 1 pcs$0.03807
- 10,000 pcs$0.03788
- Numărul piesei:
- 1N6483-E3/97
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 800V 1A DO213AB. Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Single, Tranzistori - Unijuncții programabile, Modulele Power Driver, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - scop special, Dioduri - Capacitate variabilă (Varicaps, Varactor and Dioduri - Zener - Single ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division 1N6483-E3/97 electronic components. 1N6483-E3/97 can be shipped within 24 hours after order. If you have any demands for 1N6483-E3/97, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N6483-E3/97 Atributele produsului
Numărul piesei :
1N6483-E3/97
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 800V 1A DO213AB
Serie :
SUPERECTIFIER®
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
800V
Curent - mediu rectificat (Io) :
1A
Tensiune - înainte (Vf) (Max) @ Dacă :
1.1V @ 1A
Viteză :
Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
-
Scurgeri reversibile de curent @ Vr :
10µA @ 800V
Capacitate @ Vr, F :
8pF @ 4V, 1MHz
Tipul de montare :
Surface Mount
Pachet / Caz :
DO-213AB, MELF (Glass)
Pachetul dispozitivelor furnizorilor :
DO-213AB
Temperatura de funcționare - Junction :
-65°C ~ 175°C
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